Ionizing radiation effects on MOS devices and ICs
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چکیده
The interaction of radiation with matter is a very broad and complex topic. In this chapter we try to analyse the problem with the aim of explaining, at least qualitatively, the more important aspects which are essential for a physical comprehension of the degradation observed in MOS devices and circuits when they are irradiated. In section 1.1 we introduce the effects of the interaction of various kind of particles with matter, in 1.2 the effects in the MOS devices, in 1.3 the consequent degradation of the MOS transistor electrical parameters. In section 1.4 we introduce Single Event Effects, phenomena induced in a device or a circuit by the impact of a single particle or ion.
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